Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 156
... pump throttle - valve mechanism is capa- ble of reproducing its orifice area ( conductance ) in the throttle position . Turbomolecular pumps do not require a throttle valve if a sufficiently high - capacity backing pump is used . To ...
... pump throttle - valve mechanism is capa- ble of reproducing its orifice area ( conductance ) in the throttle position . Turbomolecular pumps do not require a throttle valve if a sufficiently high - capacity backing pump is used . To ...
Page 340
... pump so that its inlet pressure never exceeds about 150 mTorr . In addition , safety precautions are required when certain gases are used . Oxidation resistant pump fluids must be used with oxidizing gases ( e.g. , O2 , F2 ) . If the ...
... pump so that its inlet pressure never exceeds about 150 mTorr . In addition , safety precautions are required when certain gases are used . Oxidation resistant pump fluids must be used with oxidizing gases ( e.g. , O2 , F2 ) . If the ...
Page 511
... pump employed to evacuate the chamber . Gases can be admitted to the reactor through metering valves after passing through a flow measuring device such as a rotameter or mass flow meter . It is often important to control the flow rate ...
... pump employed to evacuate the chamber . Gases can be admitted to the reactor through metering valves after passing through a flow measuring device such as a rotameter or mass flow meter . It is often important to control the flow rate ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min