Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 70
Page 119
... range of Ar pressure in two modes : ( a ) constant current and ( b ) constant power . In Fig . 7 the deposition rates in a 48 cm planetary system of Al- 2 % Si are shown for the two modes over a range of Ar pressures . The source was ...
... range of Ar pressure in two modes : ( a ) constant current and ( b ) constant power . In Fig . 7 the deposition rates in a 48 cm planetary system of Al- 2 % Si are shown for the two modes over a range of Ar pressures . The source was ...
Page 269
... range , indicating that the nature of the rate - controlling step changes with temperature . The observed behavior suggests that in the lower range , the rate - controlling step is some surface process , the rate of which is ...
... range , indicating that the nature of the rate - controlling step changes with temperature . The observed behavior suggests that in the lower range , the rate - controlling step is some surface process , the rate of which is ...
Page 369
... range ) requires internal electrodes . With higher frequencies , external electrodes or a coil also can be used ... range , it is necessary to employ magnetic enhancement . Under typical conditions , polymer deposition occurs mainly onto ...
... range ) requires internal electrodes . With higher frequencies , external electrodes or a coil also can be used ... range , it is necessary to employ magnetic enhancement . Under typical conditions , polymer deposition occurs mainly onto ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min