Thin Film Processes, Volume 1Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Results 1-3 of 48
Page 303
SiH , diluted with N , begins to form SiO2 films at a substrate temperature of about
240°C if the 02 / SiHA mole ratio is in the range of 3 : 1 ( 264 ) . The rate of film
growth increases rapidly as the temperature is increased to 310°C , and very ...
SiH , diluted with N , begins to form SiO2 films at a substrate temperature of about
240°C if the 02 / SiHA mole ratio is in the range of 3 : 1 ( 264 ) . The rate of film
growth increases rapidly as the temperature is increased to 310°C , and very ...
Page 345
Variation of the refractive index with the SiH , / N , ratio ( after Gereth and
Scherber ( 16 ) , by permission of the publisher , The Electrochemical Society ... 5
shows the variation of refractive index with the SiH _ / N , ratios of the entrant
gases .
Variation of the refractive index with the SiH , / N , ratio ( after Gereth and
Scherber ( 16 ) , by permission of the publisher , The Electrochemical Society ... 5
shows the variation of refractive index with the SiH _ / N , ratios of the entrant
gases .
Page 376
Consequently , the higher the bypass ratio of a reactor is , the lower the
conversion of the starting material to the polymer . Clearly , this ratio depends on
the ratio of the volume occupied by discharge to the total volume . 2 . Relative
Position of ...
Consequently , the higher the bypass ratio of a reactor is , the lower the
conversion of the starting material to the polymer . Clearly , this ratio depends on
the ratio of the volume occupied by discharge to the total volume . 2 . Relative
Position of ...
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Contents
Glow Discharge Sputter Deposition | 12 |
Glow Discharges | 24 |
Equipment Configuration | 31 |
Copyright | |
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Common terms and phrases
addition alloys anode Appl applications atoms cathode charge chemical coatings composition compounds concentration constant containing density dependent deposition rate effect electric Electrochem electron energy Epitaxial etch rate etchants example factor flow formation gases given glass glow discharge heating higher important increase ion beam ionization layer less limited lower magnetic field magnetron material metal method negative nitride occurs operation oxide pattern Phys plasma plating polishing polymer polymerization positive potential prepared pressure produce properties range ratio reaction reactive reactor reducing Reference region relatively resistance semiconductor shown in Fig silicon solution species sputtering starting structure substrate surface Table target techniques Technol temperature thermal thickness Thin Thin Film tion typically um/min uniform usually vacuum vapor various voltage yield York
Bibliographic information
| Title | Thin Film Processes, Volume 1 Thin Film Processes, John L. Vossen |
| Editors | John L. Vossen, Werner Kern |
| Contributor | Elsevier Science & Technology (Firm) |
| Edition | 8, illustrated |
| Publisher | Academic Press, 1978 |
| Original from | the University of Michigan |
| Digitized | 10 Dec 2007 |
| ISBN | 0127282505, 9780127282503 |
| Length | 564 pages |
| Subjects | › Technology & Engineering / General |
| Export Citation | BiBTeX EndNote RefMan |