Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 303
... ratio must be progressively in- creased with the temperature . For example , at 475 ° C , an O2 / SiH , ratio of at least 14 : 1 is required . Larger ratios of up to 33 : 1 cause no change , but ratios beyond this limit inhibit the ...
... ratio must be progressively in- creased with the temperature . For example , at 475 ° C , an O2 / SiH , ratio of at least 14 : 1 is required . Larger ratios of up to 33 : 1 cause no change , but ratios beyond this limit inhibit the ...
Page 304
... RATIO 10- -10. 11200 -50 800 35 10 15 23 30 OXYGEN / HYDRIDE RATIO 15 FILM DEPOSITION RATE , A / min 1400 1200 1000 -40 35 OXYGEN / HYDRIDE RATIO RATIO الليلية 800 600 400 200 400 = Fig . 16. Deposition rate of PSG films as a function of ...
... RATIO 10- -10. 11200 -50 800 35 10 15 23 30 OXYGEN / HYDRIDE RATIO 15 FILM DEPOSITION RATE , A / min 1400 1200 1000 -40 35 OXYGEN / HYDRIDE RATIO RATIO الليلية 800 600 400 200 400 = Fig . 16. Deposition rate of PSG films as a function of ...
Page 345
... RATIO Fig . 5. Variation of the refractive index with the SiH4 / N2 ratio ( after Gereth and Scherber [ 16 ] , by permission of the publisher , The Electrochemical Society , Inc. ) . As representative examples [ 16 ] , Fig . 5 shows the ...
... RATIO Fig . 5. Variation of the refractive index with the SiH4 / N2 ratio ( after Gereth and Scherber [ 16 ] , by permission of the publisher , The Electrochemical Society , Inc. ) . As representative examples [ 16 ] , Fig . 5 shows the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min