Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 238
... reaction 2H + + 2e → H2 take place , and at the anode the reaction is 2H2O → O2 + 4H ++ 4e . Since the potential of the hydrogen reaction may be regarded as zero , the decomposition potential is essentially that required for the ...
... reaction 2H + + 2e → H2 take place , and at the anode the reaction is 2H2O → O2 + 4H ++ 4e . Since the potential of the hydrogen reaction may be regarded as zero , the decomposition potential is essentially that required for the ...
Page 262
... reaction is the deposition of silicon from silicon tetrachloride : SiCl4 + 2H200 - Si ( s ) + 4HCl ) . The HCl formed might , in turn , react with the solid Si to form other gas- eous species detected in the Si - Cl - H system [ 34 , 35 ] ...
... reaction is the deposition of silicon from silicon tetrachloride : SiCl4 + 2H200 - Si ( s ) + 4HCl ) . The HCl formed might , in turn , react with the solid Si to form other gas- eous species detected in the Si - Cl - H system [ 34 , 35 ] ...
Page 263
... Reaction . The essential reaction in the deposition of GaAs by means of the chloride method is a good example of a chemical transport reaction . Transport in these processes depends upon the differ- ence in equilibrium constants for the ...
... Reaction . The essential reaction in the deposition of GaAs by means of the chloride method is a good example of a chemical transport reaction . Transport in these processes depends upon the differ- ence in equilibrium constants for the ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min