Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 20
Page 274
... rates of mass transfer of the gaseous reactant and by - product species relative to their surface reaction rate to form the film deposit . At normal atmospheric pressure these rates are generally of the same order of magnitude . There ...
... rates of mass transfer of the gaseous reactant and by - product species relative to their surface reaction rate to form the film deposit . At normal atmospheric pressure these rates are generally of the same order of magnitude . There ...
Page 438
... reaction rates versus 1 / T , for several compositions ; E , ranging from 4 to 20 kcal / mol [ 255 ] General etching ; no difference in etch rates for n- , p- , n - p - type [ 252 ] 10 ~ 20 50 μm / min good results using μm / min < 65 ...
... reaction rates versus 1 / T , for several compositions ; E , ranging from 4 to 20 kcal / mol [ 255 ] General etching ; no difference in etch rates for n- , p- , n - p - type [ 252 ] 10 ~ 20 50 μm / min good results using μm / min < 65 ...
Page 534
... rates . As the flow rate is lowered , at constant pressure , residual gases resulting from real and virtual leaks ... reaction producing etching occurs on this sur- face . The factor ß in Eq . ( 6 ) is effectively a reaction rate ...
... rates . As the flow rate is lowered , at constant pressure , residual gases resulting from real and virtual leaks ... reaction producing etching occurs on this sur- face . The factor ß in Eq . ( 6 ) is effectively a reaction rate ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min