Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 48
... reactive gases and bury them ; and the cylindrical enclosure acts as a conductance- limiting baffle , retarding the entry of more contaminating gases into the active region of the discharge . After all of the reactive gases are gettered ...
... reactive gases and bury them ; and the cylindrical enclosure acts as a conductance- limiting baffle , retarding the entry of more contaminating gases into the active region of the discharge . After all of the reactive gases are gettered ...
Page 50
... reactive sputtering processes that have been described in the literature . Instead , we present a bibliography of reactive sputtering and reactive ion plating processes in Table V. This table includes only processes in which the target ...
... reactive sputtering processes that have been described in the literature . Instead , we present a bibliography of reactive sputtering and reactive ion plating processes in Table V. This table includes only processes in which the target ...
Page 195
... reactive gas added to the deposition region . Even in sputtering the com- pound directly it is usually necessary to add the reactive gas to compen- sate for the loss of reactive component by dissociation [ 40 ] . Method ( b ) uses an ...
... reactive gas added to the deposition region . Even in sputtering the com- pound directly it is usually necessary to add the reactive gas to compen- sate for the loss of reactive component by dissociation [ 40 ] . Method ( b ) uses an ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min