Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 26
... region in which incom- ing discharge ions and positive ions produced at the cathode are neutral- ized by a variety of processes . This is also the region in which secondary electrons begin to accelerate away from the cathode . The light ...
... region in which incom- ing discharge ions and positive ions produced at the cathode are neutral- ized by a variety of processes . This is also the region in which secondary electrons begin to accelerate away from the cathode . The light ...
Page 132
... region in front of a substantially flat cathode sur- face where the magnetic field is normal to the electric field . Bounding this region , the magnetic field lines enter the cathode surface . Ideally , at the point of entry the field ...
... region in front of a substantially flat cathode sur- face where the magnetic field is normal to the electric field . Bounding this region , the magnetic field lines enter the cathode surface . Ideally , at the point of entry the field ...
Page 182
... region of magnetic field lines acts as a magnetic mirror to reflect electrons back to the cathode region [ 23 ] , enhancing ionization efficiency . 4. Other Ion Sources Several additional ion source types will be mentioned , with refer ...
... region of magnetic field lines acts as a magnetic mirror to reflect electrons back to the cathode region [ 23 ] , enhancing ionization efficiency . 4. Other Ion Sources Several additional ion source types will be mentioned , with refer ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min