Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 37
... relatively slow , deposition rates can be monitored by controlling conditions and deposition time . In- vacuum ... relatively massive and has a relatively slow thermal response time . The radiant heater can be used either to heat sub ...
... relatively slow , deposition rates can be monitored by controlling conditions and deposition time . In- vacuum ... relatively massive and has a relatively slow thermal response time . The radiant heater can be used either to heat sub ...
Page 188
... relatively low voltage , but may need to deliver several amperes in some sources . The extraction voltage power supply is high voltage , low current , and should be protected against arcing or shorting which may occur between the ...
... relatively low voltage , but may need to deliver several amperes in some sources . The extraction voltage power supply is high voltage , low current , and should be protected against arcing or shorting which may occur between the ...
Page 526
... relatively stable , that is it should have a reasonably large heat of formation . The latter condition , apart from providing a thermodynamic driving force for the etching reac- tion , ensures that the volatile compound , once formed ...
... relatively stable , that is it should have a reasonably large heat of formation . The latter condition , apart from providing a thermodynamic driving force for the etching reac- tion , ensures that the volatile compound , once formed ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min