Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Results 1-3 of 89
Page 28
... shown in Fig . 6 [ 122 ] . The aver- age dc value of this potential ( V ̧ ) is nearly equal to the peak voltage ap- plied [ 123 ] . To obtain sputtering from only one electrode in an rf system , it has been shown [ 120 ] that the ...
... shown in Fig . 6 [ 122 ] . The aver- age dc value of this potential ( V ̧ ) is nearly equal to the peak voltage ap- plied [ 123 ] . To obtain sputtering from only one electrode in an rf system , it has been shown [ 120 ] that the ...
Page 82
... shown in Fig . 4c . Electrons are emitted from a cold cathode with an initial energy ( ~ 5 eV ) that is small ... shown in Fig . 4d . In the case of thin sheaths ( d , << rg ) over cylindrical cathodes of radius R ,, the turning distance ...
... shown in Fig . 4c . Electrons are emitted from a cold cathode with an initial energy ( ~ 5 eV ) that is small ... shown in Fig . 4d . In the case of thin sheaths ( d , << rg ) over cylindrical cathodes of radius R ,, the turning distance ...
Page 92
... shown in Fig . 9. If this solenoid is in contact with cooling water , it must be operated at a negative potential with respect to the cathode to avoid corrosion through pinholes in the insulation . A cathode solenoid by itself will ...
... shown in Fig . 9. If this solenoid is in contact with cooling water , it must be operated at a negative potential with respect to the cathode to avoid corrosion through pinholes in the insulation . A cathode solenoid by itself will ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min