Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 298
... silane - ammonia reaction and ( 2 ) the silicon tetrachloride - am- monia reaction under normal - pressure conditions according to the follow- ing overall equations : and 3SiH , + 4NH3 - - Si3N4 + 12H2 3SiCl4NH3 ← Si , N + 12HCI . The ...
... silane - ammonia reaction and ( 2 ) the silicon tetrachloride - am- monia reaction under normal - pressure conditions according to the follow- ing overall equations : and 3SiH , + 4NH3 - - Si3N4 + 12H2 3SiCl4NH3 ← Si , N + 12HCI . The ...
Page 309
... silane are the lower price , the applicability at higher temperature where higher growth rates are possible , and the absence of need for water cooling of reactor walls . Silane is advantageous when low deposition temperatures are ...
... silane are the lower price , the applicability at higher temperature where higher growth rates are possible , and the absence of need for water cooling of reactor walls . Silane is advantageous when low deposition temperatures are ...
Page 352
... silane , Si ( OC2H5 ) ] is decomposed in the pres- ence of an oxygen plasma amorphous silicon oxide films are formed [ 30– 32 ] . Tetraethoxy silane is a liquid and must be transported by a carrier gas ( O2 ) into the reaction zone . If ...
... silane , Si ( OC2H5 ) ] is decomposed in the pres- ence of an oxygen plasma amorphous silicon oxide films are formed [ 30– 32 ] . Tetraethoxy silane is a liquid and must be transported by a carrier gas ( O2 ) into the reaction zone . If ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min