Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 403
... soluble in the etchant medium , or must at least be carried away from the surface by the medium . Various types of reactions which may be involved are ox- idation - reduction , of which electrochemical etching is a special case ...
... soluble in the etchant medium , or must at least be carried away from the surface by the medium . Various types of reactions which may be involved are ox- idation - reduction , of which electrochemical etching is a special case ...
Page 424
... soluble in H2SO4 . In addition , the amorphous modifications are soluble also in CS2 , the monoclinic form in HNO3 , and the hexagonal crystal form in CHC13 . The discussion of elemental semiconductor etching that follows is con- cerned ...
... soluble in H2SO4 . In addition , the amorphous modifications are soluble also in CS2 , the monoclinic form in HNO3 , and the hexagonal crystal form in CHC13 . The discussion of elemental semiconductor etching that follows is con- cerned ...
Page 460
... soluble in solution 2 ~ 10 % KAI ( SO ) 212H2O Slowly soluble Lead 1 FeCl 36–42 ° Bé ; 43–54 ° 2 9FeCl3 42 ° Bé , 1HC1 20 ° Bé ; 43-49 ° [ 15 ] 4 1HNO3 , 19H2O A / dm2 , Pb or Cu cathode 6 Other electrochemical polishes 5 35HCIO ,, 63 ...
... soluble in solution 2 ~ 10 % KAI ( SO ) 212H2O Slowly soluble Lead 1 FeCl 36–42 ° Bé ; 43–54 ° 2 9FeCl3 42 ° Bé , 1HC1 20 ° Bé ; 43-49 ° [ 15 ] 4 1HNO3 , 19H2O A / dm2 , Pb or Cu cathode 6 Other electrochemical polishes 5 35HCIO ,, 63 ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min