Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 203
... stable phase to form , but if two or more structures are of competing stability , the possibility arises of preferentially retaining one type . Spencer et al . [ 72 ] attribute the pref- erential formation of diamond bonds to the ...
... stable phase to form , but if two or more structures are of competing stability , the possibility arises of preferentially retaining one type . Spencer et al . [ 72 ] attribute the pref- erential formation of diamond bonds to the ...
Page 244
... stable that although the Cu metal concentration may be appre- ciable , the actual Cu ion concentration is low enough ... stability ; the shift to more negative values tends to crowd the electrode potentials closer together . The energy ...
... stable that although the Cu metal concentration may be appre- ciable , the actual Cu ion concentration is low enough ... stability ; the shift to more negative values tends to crowd the electrode potentials closer together . The energy ...
Page 301
... stable chemically [ 246 ] . Another refractory nitride of interest is aluminum nitride , AIN , which has potential as ... stability [ 248 ] . Aluminum nitride films have been deposited by reacting NH3 with AICI , [ 248-250 ] or Al ( CH3 ) ...
... stable chemically [ 246 ] . Another refractory nitride of interest is aluminum nitride , AIN , which has potential as ... stability [ 248 ] . Aluminum nitride films have been deposited by reacting NH3 with AICI , [ 248-250 ] or Al ( CH3 ) ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min