Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 364
... starting material must contain polymerizable structures such as olefinic double bonds , triple bonds , or cyclic structures . Plasma ( atomic ) polymerization is a unique process which occurs only in a plasma state . This polymerization ...
... starting material must contain polymerizable structures such as olefinic double bonds , triple bonds , or cyclic structures . Plasma ( atomic ) polymerization is a unique process which occurs only in a plasma state . This polymerization ...
Page 373
... starting material ( e.g. , ethylene ) could not even initiate a glow discharge with an- other starting material ( e.g. , n - hexane ) under otherwise identical condi- tions . In other words , a relative level of discharge power which ...
... starting material ( e.g. , ethylene ) could not even initiate a glow discharge with an- other starting material ( e.g. , n - hexane ) under otherwise identical condi- tions . In other words , a relative level of discharge power which ...
Page 377
... Starting Material and Flow Pattern The location where the starting material is introduced is very impor- tant for polymer deposition . The importance of flow pattern with respect to the location of energy input and of polymer deposition ...
... Starting Material and Flow Pattern The location where the starting material is introduced is very impor- tant for polymer deposition . The importance of flow pattern with respect to the location of energy input and of polymer deposition ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min