Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 363
... starting material since the molecular structure of the starting material is not retained in the polymer structure . This leads to another im- portant point - the glow discharge polymerization or polymers formed by glow discharge of a ...
... starting material since the molecular structure of the starting material is not retained in the polymer structure . This leads to another im- portant point - the glow discharge polymerization or polymers formed by glow discharge of a ...
Page 364
... starting material must contain polymerizable structures such as olefinic double bonds , triple bonds , or cyclic structures . Plasma ( atomic ) polymerization is a unique process which occurs only in a plasma state . This polymerization ...
... starting material must contain polymerizable structures such as olefinic double bonds , triple bonds , or cyclic structures . Plasma ( atomic ) polymerization is a unique process which occurs only in a plasma state . This polymerization ...
Page 373
... starting material ( e.g. , ethylene ) could not even initiate a glow discharge with an- other starting material ( e.g. , n - hexane ) under otherwise identical condi- tions . In other words , a relative level of discharge power which ...
... starting material ( e.g. , ethylene ) could not even initiate a glow discharge with an- other starting material ( e.g. , n - hexane ) under otherwise identical condi- tions . In other words , a relative level of discharge power which ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York