Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 157
... substrate is shielded or negatively biased in some manner , will bombard the substrate with almost the full energy of the dc cathode potential [ 30 ] . It has been estimated that for conventional rf sputtering , of the 5-10 % of the ...
... substrate is shielded or negatively biased in some manner , will bombard the substrate with almost the full energy of the dc cathode potential [ 30 ] . It has been estimated that for conventional rf sputtering , of the 5-10 % of the ...
Page 158
... substrate bias voltages from 0 to 400 V for disk planar magne- tron cathode potentials of 350-485 V , +35 V on a concentric - ring anode , and a 5 cm cathode - substrate separation . They found that at 5 mTorr argon pressure for substrate ...
... substrate bias voltages from 0 to 400 V for disk planar magne- tron cathode potentials of 350-485 V , +35 V on a concentric - ring anode , and a 5 cm cathode - substrate separation . They found that at 5 mTorr argon pressure for substrate ...
Page 168
... substrate heating was required for adequate step cov- erage [ 61 ] . However , other work has indicated that excellent step cover- age can be achieved with PM sputtering without substrate heating [ 98 ] . The substrates were 7 cm from a ...
... substrate heating was required for adequate step cov- erage [ 61 ] . However , other work has indicated that excellent step cover- age can be achieved with PM sputtering without substrate heating [ 98 ] . The substrates were 7 cm from a ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min