Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 157
... substrate is shielded or negatively biased in some manner , will bombard the substrate with almost the full energy of the dc cathode potential [ 30 ] . It has been estimated that for conventional rf sputtering , of the 5-10 % of the ...
... substrate is shielded or negatively biased in some manner , will bombard the substrate with almost the full energy of the dc cathode potential [ 30 ] . It has been estimated that for conventional rf sputtering , of the 5-10 % of the ...
Page 158
... substrate bias voltages from 0 to 400 V for disk planar magne- tron cathode potentials of 350-485 V , +35 V on a concentric - ring anode , and a 5 cm cathode - substrate separation . They found that at 5 mTorr argon pressure for substrate ...
... substrate bias voltages from 0 to 400 V for disk planar magne- tron cathode potentials of 350-485 V , +35 V on a concentric - ring anode , and a 5 cm cathode - substrate separation . They found that at 5 mTorr argon pressure for substrate ...
Page 168
... substrate heating was required for adequate step cov- erage [ 61 ] . However , other work has indicated that excellent step cover- age can be achieved with PM sputtering without substrate heating [ 98 ] . The substrates were 7 cm from a ...
... substrate heating was required for adequate step cov- erage [ 61 ] . However , other work has indicated that excellent step cover- age can be achieved with PM sputtering without substrate heating [ 98 ] . The substrates were 7 cm from a ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York