Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 271
... susceptor affects the flow and thus the transport phenomena considerably . Furthermore , in many instances susceptors are rather short and entry effects can play a significant role . Under such complex condi- tions , it is difficult to ...
... susceptor affects the flow and thus the transport phenomena considerably . Furthermore , in many instances susceptors are rather short and entry effects can play a significant role . Under such complex condi- tions , it is difficult to ...
Page 272
... susceptor [ 36 ] . Measurements were taken under conditions of varying susceptor tem- perature and gas velocity and with different carrier gases ( N2 , He , H2 ) [ 62 ] . The main results can be summarized as follows : ( 1 ) There is a ...
... susceptor [ 36 ] . Measurements were taken under conditions of varying susceptor tem- perature and gas velocity and with different carrier gases ( N2 , He , H2 ) [ 62 ] . The main results can be summarized as follows : ( 1 ) There is a ...
Page 284
... susceptor surface where the substrate wafers are placed . In the case of deposition from SiH4 , the walls are water cooled to prevent the on - wall decomposi- tion of SiH4 . When SiCl4 is used , only air cooling is employed ; walls ...
... susceptor surface where the substrate wafers are placed . In the case of deposition from SiH4 , the walls are water cooled to prevent the on - wall decomposi- tion of SiH4 . When SiCl4 is used , only air cooling is employed ; walls ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min