Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 153
... thermal conductances of the backing plate , the target backing - plate interface , and the target itself . These con- ductances depend on the thermal resistance ( thickness × thermal con- ductivity ) of the materials involved . Table V ...
... thermal conductances of the backing plate , the target backing - plate interface , and the target itself . These con- ductances depend on the thermal resistance ( thickness × thermal con- ductivity ) of the materials involved . Table V ...
Page 187
... Thermal ex- pansion leads to distortion , directly affecting extracted ion density and uniformity . These problems are minimized in ion thrusters by using dished molybdenum grids [ 4 ] , such that thermal distortion occurs uni- formly ...
... Thermal ex- pansion leads to distortion , directly affecting extracted ion density and uniformity . These problems are minimized in ion thrusters by using dished molybdenum grids [ 4 ] , such that thermal distortion occurs uni- formly ...
Page 418
... THERMAL P - ETCH , ~ 25 ° THERMAL IHF / 25 H2O , 25 ° THERMAL IP - ETCH / 9 H20,24 ° . 1 1 4 6 8 10 12 14 GLASS COMPOSITION , mole % P205 Fig . 3. Etch rates of phosphosilicate glass films versus mol % P2O , in the glass . 450 ° C : CVD ...
... THERMAL P - ETCH , ~ 25 ° THERMAL IHF / 25 H2O , 25 ° THERMAL IP - ETCH / 9 H20,24 ° . 1 1 4 6 8 10 12 14 GLASS COMPOSITION , mole % P205 Fig . 3. Etch rates of phosphosilicate glass films versus mol % P2O , in the glass . 450 ° C : CVD ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min