Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 143
... thickness uniformity . Actual sputtering thickness distributions usually agree with calcula- tions based on a cosine emission of sputtered material from the erosion area [ 50 ] . However , such calculations may be inaccurate at high ...
... thickness uniformity . Actual sputtering thickness distributions usually agree with calcula- tions based on a cosine emission of sputtered material from the erosion area [ 50 ] . However , such calculations may be inaccurate at high ...
Page 150
... thickness by deposition time . For static deposition with PM sources , the thickness is usually nonuniform , so a thickness average ( or even maximum thickness ) is used to calculate reported deposition rates . For linear motion of ...
... thickness by deposition time . For static deposition with PM sources , the thickness is usually nonuniform , so a thickness average ( or even maximum thickness ) is used to calculate reported deposition rates . For linear motion of ...
Page 252
... thickness is limited to about 1.3 nm / V applied . This thick- ness represents the distance through which ions can penetrate the oxide under the influence of the applied potential . Once this limiting thickness is reached , it is an ...
... thickness is limited to about 1.3 nm / V applied . This thick- ness represents the distance through which ions can penetrate the oxide under the influence of the applied potential . Once this limiting thickness is reached , it is an ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min