Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 55
... TORR 50 m TORR 100 m TORR VDC = 4 kV 25 50 75 100 125 20 m TORR 100 mTORR AXIAL MAGNETIC FIELD ( GAUSS ) Fig . 16. The variation of the floating potential with Ar pressure , target voltage , and axial magnetic field in a de sputtering ...
... TORR 50 m TORR 100 m TORR VDC = 4 kV 25 50 75 100 125 20 m TORR 100 mTORR AXIAL MAGNETIC FIELD ( GAUSS ) Fig . 16. The variation of the floating potential with Ar pressure , target voltage , and axial magnetic field in a de sputtering ...
Page 108
... ( Torr - f / sec ) 0 1 2 3 4 5 6 INJECTION ( Torr - / sec ) ( a ) ( b ) 0.05 0.10 INJECTION ( Torr - / sec ) ( c ) 0.15 Fig . 21. Discharge voltage , deposition rate , and reactive gas consumption as a function of reactive gas injection ...
... ( Torr - f / sec ) 0 1 2 3 4 5 6 INJECTION ( Torr - / sec ) ( a ) ( b ) 0.05 0.10 INJECTION ( Torr - / sec ) ( c ) 0.15 Fig . 21. Discharge voltage , deposition rate , and reactive gas consumption as a function of reactive gas injection ...
Page 354
... Torr , a fine brownish powder is deposited along with the film . Rapid gas phase polymerization with nucleation of ... Torr is 0.14 ( 0.7 × 1022 atoms / cm3 ) , while at 25 ° C and 1.0 Torr the atomic fraction is 0.35 ( 1.7 × 1022 atoms ...
... Torr , a fine brownish powder is deposited along with the film . Rapid gas phase polymerization with nucleation of ... Torr is 0.14 ( 0.7 × 1022 atoms / cm3 ) , while at 25 ° C and 1.0 Torr the atomic fraction is 0.35 ( 1.7 × 1022 atoms ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min