Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 263
... Transport Reaction . The essential reaction in the deposition of GaAs by means of the chloride method is a good example of a chemical transport reaction . Transport in these processes depends upon the differ- ence in equilibrium ...
... Transport Reaction . The essential reaction in the deposition of GaAs by means of the chloride method is a good example of a chemical transport reaction . Transport in these processes depends upon the differ- ence in equilibrium ...
Page 270
... transport limitations will be discussed in the next section . It is important to keep in mind that while thermodynamics specifies what ought to happen in the reactor , the kinetics determine what actually will happen . D. Transport ...
... transport limitations will be discussed in the next section . It is important to keep in mind that while thermodynamics specifies what ought to happen in the reactor , the kinetics determine what actually will happen . D. Transport ...
Page 271
... transport phenomena are understood , one can design a CVD reactor capable of fulfilling the above requirements . Transport phenomena in fluids ( i.e. , gases and liquids ) are related to the nature of the fluid flow . We shall therefore ...
... transport phenomena are understood , one can design a CVD reactor capable of fulfilling the above requirements . Transport phenomena in fluids ( i.e. , gases and liquids ) are related to the nature of the fluid flow . We shall therefore ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min