Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 103
... typically so too that in the discharge . In the case of a cylindrical - hollow magne- tron the charged particle density on the axis is typically about that adja- cent to the target wall . ( Similar charge particle densities are found in ...
... typically so too that in the discharge . In the case of a cylindrical - hollow magne- tron the charged particle density on the axis is typically about that adja- cent to the target wall . ( Similar charge particle densities are found in ...
Page 105
... typically a factor of two larger for cylindrical - hollow magnetrons be- cause of the higher plasma density adjacent to the substrates . Electrically isolated substrates on the axis of a cylindrical - hollow magnetron generally assume a ...
... typically a factor of two larger for cylindrical - hollow magnetrons be- cause of the higher plasma density adjacent to the substrates . Electrically isolated substrates on the axis of a cylindrical - hollow magnetron generally assume a ...
Page 288
... ( typically ± 5 ° C ) . Input gas flow rates are measured and controlled by either rotameter- type flow meters or by electronic mass controllers . The rotameters are frequently coupled to precision valves which are used to preset flows ...
... ( typically ± 5 ° C ) . Input gas flow rates are measured and controlled by either rotameter- type flow meters or by electronic mass controllers . The rotameters are frequently coupled to precision valves which are used to preset flows ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min