Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 81
... uniform and E is parallel to B , the particles are freely accelerated and the helix pitch increases continuously . When there is an electric field component E ( volts per centimeter ) perpendicular to B , a drift of speed VE = 108E / B ...
... uniform and E is parallel to B , the particles are freely accelerated and the helix pitch increases continuously . When there is an electric field component E ( volts per centimeter ) perpendicular to B , a drift of speed VE = 108E / B ...
Page 109
... Uniform current densities of over 200 mA / cm2 have been achieved . Both post and hollow devices have been operated with rf power . Long cathodes can provide uniform coatings over large areas . Hollow cathodes are effective for coating ...
... Uniform current densities of over 200 mA / cm2 have been achieved . Both post and hollow devices have been operated with rf power . Long cathodes can provide uniform coatings over large areas . Hollow cathodes are effective for coating ...
Page 508
... uniform flow of feed gas does not ensure a uniform concentration of plasma - activated spe- cies . As an example of this , Fig . 4 shows the variation of emission from HR 100 1.5 MICRONS RF ON 2 OFF O 2 I ( CO , OH 2830 A. ARB . SCALE ] ...
... uniform flow of feed gas does not ensure a uniform concentration of plasma - activated spe- cies . As an example of this , Fig . 4 shows the variation of emission from HR 100 1.5 MICRONS RF ON 2 OFF O 2 I ( CO , OH 2830 A. ARB . SCALE ] ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min