Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 150
... usually calibrated in terms of nitro- gen - equivalent pressure and all except the capacitance manometer have ... usually the average rate determined by dividing thickness by deposition time . For static deposition with PM sources , the ...
... usually calibrated in terms of nitro- gen - equivalent pressure and all except the capacitance manometer have ... usually the average rate determined by dividing thickness by deposition time . For static deposition with PM sources , the ...
Page 221
... usually invisible Pd layer is very thin , its conductivity is not comparable to that of metallic surfaces , and the electroless layer is also kept fairly thin , so that electroplating must be started at low current densi- ties to avoid ...
... usually invisible Pd layer is very thin , its conductivity is not comparable to that of metallic surfaces , and the electroless layer is also kept fairly thin , so that electroplating must be started at low current densi- ties to avoid ...
Page 512
... usually suffices for attaining acceptably high etch rates and isotropic etching ( Section V.B.1 ) of materials such as polycrystalline Si . Certain applications , such as etch- ing of contact windows in phosphosilicate glass films ...
... usually suffices for attaining acceptably high etch rates and isotropic etching ( Section V.B.1 ) of materials such as polycrystalline Si . Certain applications , such as etch- ing of contact windows in phosphosilicate glass films ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York