Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 102
... value b , the function G is given by = ( 19 ) ( LZ ) / X . In terms of a general G ( a , b ) = Go ( b ) + aG1 ( b ) [ 1 + ... values at the midplane of the cathode . This con- tour is of minimum axial extent at the radial position X = L ...
... value b , the function G is given by = ( 19 ) ( LZ ) / X . In terms of a general G ( a , b ) = Go ( b ) + aG1 ( b ) [ 1 + ... values at the midplane of the cathode . This con- tour is of minimum axial extent at the radial position X = L ...
Page 195
... values of intrinsic stress in Al films . When substrates were exposed to the perimeter of the ion beam , however , subjecting the grow- ing film to ion bombardment , the stress was found to change from tensile to compressive , and ...
... values of intrinsic stress in Al films . When substrates were exposed to the perimeter of the ion beam , however , subjecting the grow- ing film to ion bombardment , the stress was found to change from tensile to compressive , and ...
Page 312
... value , because there are several compositions with different lattice constants , which possess the chosen bandgap value . A proper choice of lattice constants minimizes the interlayer strain in multilayer structures , and thus results ...
... value , because there are several compositions with different lattice constants , which possess the chosen bandgap value . A proper choice of lattice constants minimizes the interlayer strain in multilayer structures , and thus results ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York