Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 55
... variation of the floating potential ( V ) with various de glow dis- charge parameters is shown in Fig . 16. For rf glow discharges , the behav- ior is similar , except the magnitudes of the voltages involved are generally FLOATING ...
... variation of the floating potential ( V ) with various de glow dis- charge parameters is shown in Fig . 16. For rf glow discharges , the behav- ior is similar , except the magnitudes of the voltages involved are generally FLOATING ...
Page 56
... variation of the plasma potential ( V , ) with de glow discharge con- ditions is similar to the variation of the floating potential because parame- ters that increase electron temperature generally increase ion tempera- tures as well ...
... variation of the plasma potential ( V , ) with de glow discharge con- ditions is similar to the variation of the floating potential because parame- ters that increase electron temperature generally increase ion tempera- tures as well ...
Page 182
... variation of this configuration is the hollow anode ion source in which the beam is extracted through a hole in the cathode plate [ 26 , 27 ] . The hollow cathode ion source , of the same basic type , may be used in place of a ...
... variation of this configuration is the hollow anode ion source in which the beam is extracted through a hole in the cathode plate [ 26 , 27 ] . The hollow cathode ion source , of the same basic type , may be used in place of a ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min