Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 161
... various types of arcing . This is probably caused by the electron cur- rent to various adjacent shields and anodes and by the considerable rf component in the discharge plasma ( Chapter II - 2 , Section II.E ) . Present PM shield ...
... various types of arcing . This is probably caused by the electron cur- rent to various adjacent shields and anodes and by the considerable rf component in the discharge plasma ( Chapter II - 2 , Section II.E ) . Present PM shield ...
Page 222
... various elec- trosynthetic processes [ 23-26 ] . In one method [ 23 ] , a Ti anode is used and a film of PbO , is deposited on it from a bath containing 100 g / liter HNO3 , 320 g / liter Pb ( NO3 ) 2 , 0.3 g / liter Cu ( NO3 ) 2 , and ...
... various elec- trosynthetic processes [ 23-26 ] . In one method [ 23 ] , a Ti anode is used and a film of PbO , is deposited on it from a bath containing 100 g / liter HNO3 , 320 g / liter Pb ( NO3 ) 2 , 0.3 g / liter Cu ( NO3 ) 2 , and ...
Page 520
... various materials in pure Ar , halocarbon - 12 ( CC↳2F2 ) , and halocarbon - 113 ( CC12FCCIF2 ) and found the increased rates for Al and Si considerable . The etch rate for silicon in halocarbon - 12 was further increased by a factor ...
... various materials in pure Ar , halocarbon - 12 ( CC↳2F2 ) , and halocarbon - 113 ( CC12FCCIF2 ) and found the increased rates for Al and Si considerable . The etch rate for silicon in halocarbon - 12 was further increased by a factor ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min