Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
From inside the book
Results 1-3 of 13
Page 23
... volatile ma- terial [ 98 ] . 2. Chemical Dissociation Since most compounds have dissociation energies in the 10-100 eV range , it is not surprising that sputtering with keV ions results in chemical dissociation . Numerous studies in ...
... volatile ma- terial [ 98 ] . 2. Chemical Dissociation Since most compounds have dissociation energies in the 10-100 eV range , it is not surprising that sputtering with keV ions results in chemical dissociation . Numerous studies in ...
Page 319
... volatile metal halides at temperatures above 1100 ° C . Examples of magnetic bubble materials grown by these techniques are gad- olinium iron garent [ 423 ] , gallium - substituted yttrium iron garnet [ 424 ] , and terbium erbium iron ...
... volatile metal halides at temperatures above 1100 ° C . Examples of magnetic bubble materials grown by these techniques are gad- olinium iron garent [ 423 ] , gallium - substituted yttrium iron garnet [ 424 ] , and terbium erbium iron ...
Page 526
... volatile compound with the material to be etched . Sec- ondly , the volatile compound expected should be relatively stable , that is it should have a reasonably large heat of formation . The latter condition , apart from providing a ...
... volatile compound with the material to be etched . Sec- ondly , the volatile compound expected should be relatively stable , that is it should have a reasonably large heat of formation . The latter condition , apart from providing a ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
10 other sections not shown
Other editions - View all
Common terms and phrases
Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min