Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 28
... voltage [ 120 ] . Second , the electrodes are no longer required to be electrical conductors since rf voltages can be coupled through any kind of impedance . Thus , it is literally possible to sputter anything . However , this does not ...
... voltage [ 120 ] . Second , the electrodes are no longer required to be electrical conductors since rf voltages can be coupled through any kind of impedance . Thus , it is literally possible to sputter anything . However , this does not ...
Page 161
... voltage control until an adjustable upper limit is reached - then constant - current control ; and meters for output voltage and current . Useful optional features would in- clude : panel control settings for maximum ( controlled ) ...
... voltage control until an adjustable upper limit is reached - then constant - current control ; and meters for output voltage and current . Useful optional features would in- clude : panel control settings for maximum ( controlled ) ...
Page 183
... voltage and with decreased spacing between the plasma boundary and extraction electrode . For nonplanar geometries only the proportionality constant changes in Child's law , thus a given geo- metry may be characterized by the ratio j ...
... voltage and with decreased spacing between the plasma boundary and extraction electrode . For nonplanar geometries only the proportionality constant changes in Child's law , thus a given geo- metry may be characterized by the ratio j ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York