Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 310
... wafer Si SiCl2H , H2 ~ 1150 Epitaxial Si wafer Si SiCh2H2 , H2 1100 Epitaxial Single - crystal [ 280 , 281 ] Single - crystal [ 282 ] Si wafer Si SiH ,, H2 1050 Epitaxial Single - crystal [ 283 ] Si wafer Si SiH1 , He 900 Epitaxial ...
... wafer Si SiCl2H , H2 ~ 1150 Epitaxial Si wafer Si SiCh2H2 , H2 1100 Epitaxial Single - crystal [ 280 , 281 ] Single - crystal [ 282 ] Si wafer Si SiH ,, H2 1050 Epitaxial Single - crystal [ 283 ] Si wafer Si SiH1 , He 900 Epitaxial ...
Page 439
... wafers > 200 - μm thick ; 4 liter / min CO2 bubble stream in illumin . Teflon appl . wafer rotates 8 r / min , on / off 2 : 1 ( 100 ) Si , 0.25 - mm thick wafers For bulk thinning , followed by ( b ) For final thinning Si power device ...
... wafers > 200 - μm thick ; 4 liter / min CO2 bubble stream in illumin . Teflon appl . wafer rotates 8 r / min , on / off 2 : 1 ( 100 ) Si , 0.25 - mm thick wafers For bulk thinning , followed by ( b ) For final thinning Si power device ...
Page 508
... wafer to wafer or across a single wafer . With no stringent requirements on uniformity , the tube - type reactor is a natural choice for resist stripping since the vertical loading arrangement allows for the highest density of material ...
... wafer to wafer or across a single wafer . With no stringent requirements on uniformity , the tube - type reactor is a natural choice for resist stripping since the vertical loading arrangement allows for the highest density of material ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min