Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 15
... yield and re- lated data have been published [ 3 , 5 , 6 , 21 , 22 ] . All sputtering yields and related data should ... yield values for pure metals when alloys , compounds , or mix- tures are sputtered . As will be shown , the ...
... yield and re- lated data have been published [ 3 , 5 , 6 , 21 , 22 ] . All sputtering yields and related data should ... yield values for pure metals when alloys , compounds , or mix- tures are sputtered . As will be shown , the ...
Page 152
... yield increasing with voltage . The sputtering yield for many metals doubles or triples between 200 and 600 V. Following the rea- soning of Lamont and Turner [ 66 ] , we can show , assuming a linear rela- tion between sputtering yield ...
... yield increasing with voltage . The sputtering yield for many metals doubles or triples between 200 and 600 V. Following the rea- soning of Lamont and Turner [ 66 ] , we can show , assuming a linear rela- tion between sputtering yield ...
Page 521
... yield , indicating that voltages above 100 V must be used for effective ion etching . The yield for Ni , Fe , and Ta under argon ion bom- bardment is shown in Fig . 10a for the energy range 100-600 eV ; and from this it can be seen that ...
... yield , indicating that voltages above 100 V must be used for effective ion etching . The yield for Ni , Fe , and Ta under argon ion bom- bardment is shown in Fig . 10a for the energy range 100-600 eV ; and from this it can be seen that ...
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Å/min alloys anode Appl argon atoms cathode chemical coatings compounds current density cylindrical-post magnetron deposition rate effect elec electric Electrochem electroless electrolytic electroplating energy Epitaxial erosion etch rate etchants etching field lines film deposition flow gas pressure gases glow discharge glow discharge polymerization H₂ H₂O heating increase ion beam deposition ion bombardment ion source ionization J. A. Thornton layer mA/cm² magnetic field magnetron magnetron sputtering material metal mTorr N₂ negative neutral nitride O₂ operation oxide Phys planar magnetron plasma plating PM sputtering polymer potential power density power supply Proc reaction reactive gas reactive sputtering reactor region secondary electrons Section semiconductor shown in Fig silicon SiO2 solution sputter deposition Sputter Gun sputter yield sputtering gas stoichiometry substrate target surface Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage York