Thin Film Processes, Volume 1John L. Vossen, Werner Kern Remarkable advances have been made in recent years in the science and technology of thin film processes for deposition and etching. It is the purpose of this book to bring together tutorial reviews of selected filmdeposition and etching processes from a process viewpoint. Emphasis is placed on the practical use of the processes to provide working guidelines for their implementation, a guide to the literature, and an overview of each process. |
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Page 15
... yield and re- lated data have been published [ 3 , 5 , 6 , 21 , 22 ] . All sputtering yields and related data should ... yield values for pure metals when alloys , compounds , or mix- tures are sputtered . As will be shown , the ...
... yield and re- lated data have been published [ 3 , 5 , 6 , 21 , 22 ] . All sputtering yields and related data should ... yield values for pure metals when alloys , compounds , or mix- tures are sputtered . As will be shown , the ...
Page 152
... yield increasing with voltage . The sputtering yield for many metals doubles or triples between 200 and 600 V. Following the rea- soning of Lamont and Turner [ 66 ] , we can show , assuming a linear rela- tion between sputtering yield ...
... yield increasing with voltage . The sputtering yield for many metals doubles or triples between 200 and 600 V. Following the rea- soning of Lamont and Turner [ 66 ] , we can show , assuming a linear rela- tion between sputtering yield ...
Page 521
... yield , indicating that voltages above 100 V must be used for effective ion etching . The yield for Ni , Fe , and Ta under argon ion bom- bardment is shown in Fig . 10a for the energy range 100-600 eV ; and from this it can be seen that ...
... yield , indicating that voltages above 100 V must be used for effective ion etching . The yield for Ni , Fe , and Ta under argon ion bom- bardment is shown in Fig . 10a for the energy range 100-600 eV ; and from this it can be seen that ...
Contents
Glow Discharge Sputter Deposition | 13 |
Equipment Configuration | 31 |
Preconditioning of Targets Substrates and Systems for Film | 41 |
Copyright | |
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Å/min alloys anode Appl applications argon atoms bias bombardment cathode Chem chemical coatings composition compounds current density deposition rate dielectric discharge power effect electric Electrochem electron electroplating energy Epitaxial etch rate etchants etching processes film deposition flow rate GaAs gases glow discharge polymerization H₂ H₂O heating HNO3 increase ion beam deposition ion source ionization layer mA/cm² magnetic field magnetron mask metal mTorr N₂ nitride O₂ operation oxide photoresist Phys planar plasma plasma etching plating PM sputtering polishing polymer polymer deposition potential pressure Proc produce ratio reactants reaction reactive sputtering reactor Section semiconductor shown in Fig silicon silicon nitride SiO2 solution species sputter deposition Sputter Gun sputtering yield starting material stoichiometry substrate susceptor target surface techniques Technol temperature thermal thickness Thin Film Thin Solid Films tion U.S. Patent uniform vacuum vapor voltage wafer York µm/min