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Porous Organosilicates for OnChip Dielectric Applications
A New LowDielectric Constant Polymer Material K
Wave Polymerization During Vapor Deposition of Porous
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absorbance absorption addition adhesion annealing applications atoms barrier bonds calculated capacitance capacitors carbon chemical compared concentration conductivity cured damascene debond decrease density deposition determined developed device dielectric constant diffusion effect electrical Electron etching fabricated Figure flow fluorine FOx films function gate groups heating higher hour improve increase indicates integration interconnect interface INTRODUCTION layer leakage less low dielectric constant low-k lower materials measured mechanical metal method moisture observed obtained oxide peak performed plasma polarization polymer pore porosity porous prepared Proc properties ratio reaction reduced refractive relative Research resistance sample shown in Fig shows Si-H silica silicon SiO2 spectra stability stress structure substrate surface Symp Table Technology temperature thermal thickness thin treatment voltage Volume wafer wiring xerogel