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Calculation of Pore Size Distribution in the Ellipsometric
Thermal Conductivity Study of Porous LowK Dielectric
Reliability of Electrodeposited Copper and ECRCVD SIOF
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absorbance absorption addition adhesion annealing applications atoms barrier bonds calculated capacitance capacitors carbon chemical compared concentration conductivity cured damascene debond decrease density deposition determined developed device dielectric constant diffusion effect electrical Electron etching fabricated Figure flow fluorine FOx films function gate groups heating higher hour improve increase indicates integration interconnect interface INTRODUCTION layer leakage less low dielectric constant low-k lower materials measured mechanical metal method moisture observed obtained oxide peak performed plasma polymer pore porosity porous prepared Proc properties ratio reaction reduced refractive relative Research resistance sample shown shown in Figure shows Si-H silica silicon SiO2 spectra stability strength stress structure substrate surface Symp Table Technology temperature thermal thickness thin treatment voltage Volume wafer wiring xerogel