Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 18
... Electron Microscopy ( SEM ) . To make a porous PAE film , a modified PAE solution was made by adding a certain amount of a specially prepared organic solution . The mixture of these two solutions was stirred at room temperature and set ...
... Electron Microscopy ( SEM ) . To make a porous PAE film , a modified PAE solution was made by adding a certain amount of a specially prepared organic solution . The mixture of these two solutions was stirred at room temperature and set ...
Page 18
... Electron Microscopy ( SEM ) . To make a porous PAE film , a modified PAE solution was made by adding a certain amount of a specially prepared organic solution . The mixture of these two solutions was stirred at room temperature and set ...
... Electron Microscopy ( SEM ) . To make a porous PAE film , a modified PAE solution was made by adding a certain amount of a specially prepared organic solution . The mixture of these two solutions was stirred at room temperature and set ...
Page 146
... Electron Devices Meeting , 1993 , p.261 . [ 4 ] M. T. Bohr , Technical Digest of International Electron Devices Meeting , 1995 , p.241 . [ 5 ] K. Yamashita and S. Odanaka , 1997 Symposium on VLSI Technology Digest of Technical Papers ...
... Electron Devices Meeting , 1993 , p.261 . [ 4 ] M. T. Bohr , Technical Digest of International Electron Devices Meeting , 1995 , p.241 . [ 5 ] K. Yamashita and S. Odanaka , 1997 Symposium on VLSI Technology Digest of Technical Papers ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films