Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 44
... Figure 5 . FI - IR spectra of perhydropolysilazane 4000 3000 2000 wavenumber / cm - 1 1000 data for PPSZ films ... Figure 3 ( A ) , are shown in Figure 6 ( A ) . In Figure 6 ( B ) , the FT - IR spectra of the film [ Sample B ] prepared ...
... Figure 5 . FI - IR spectra of perhydropolysilazane 4000 3000 2000 wavenumber / cm - 1 1000 data for PPSZ films ... Figure 3 ( A ) , are shown in Figure 6 ( A ) . In Figure 6 ( B ) , the FT - IR spectra of the film [ Sample B ] prepared ...
Page 45
... ( Figure 8 ) . Film having a dielectric constant of 1.6 was allowed to stand in a clean room ( 20-24 ° C , 40-60 % RH ) for up to 50 days and the capacitance was measured . As shown in Figure 9 , the dielectric constants increased c.a. 4 ...
... ( Figure 8 ) . Film having a dielectric constant of 1.6 was allowed to stand in a clean room ( 20-24 ° C , 40-60 % RH ) for up to 50 days and the capacitance was measured . As shown in Figure 9 , the dielectric constants increased c.a. 4 ...
Page 65
... Figure 2. Typical pore diameter distribution curves of IPS measured by BJH method with several film densities cured at 400 ° C in an N2 ambient . 2.0 1.5 1.0 0.5 0 Film density ( g / cm3 ) Figure 3. Mean pore diameters of IPS measured ...
... Figure 2. Typical pore diameter distribution curves of IPS measured by BJH method with several film densities cured at 400 ° C in an N2 ambient . 2.0 1.5 1.0 0.5 0 Film density ( g / cm3 ) Figure 3. Mean pore diameters of IPS measured ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films