Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 43
... Si - H ( 830 cm3 , 2,250 cm1 ) , Si - H2 ( 960 cm ' , 980 cm1 , and 2,180 cm31 ) , Si - O ( 1,070 cm1 ) and Si - N ( 950 cm3 ) moieties . The Si- N moiety in the FT - IR spectra overlaps with the large Si - O absorption . However ...
... Si - H ( 830 cm3 , 2,250 cm1 ) , Si - H2 ( 960 cm ' , 980 cm1 , and 2,180 cm31 ) , Si - O ( 1,070 cm1 ) and Si - N ( 950 cm3 ) moieties . The Si- N moiety in the FT - IR spectra overlaps with the large Si - O absorption . However ...
Page 131
) 1 [ concentration of Si - H bonds in the film . The amount of Si - H bonds can be controlled by adjusting the deposition conditions , such as deposition temperature , bias power and gas flow ratio . Fig 2 are plots of FTIR spectrum ...
) 1 [ concentration of Si - H bonds in the film . The amount of Si - H bonds can be controlled by adjusting the deposition conditions , such as deposition temperature , bias power and gas flow ratio . Fig 2 are plots of FTIR spectrum ...
Page 270
... Si - H ( stretching , rocking at 2254 , 565 cm ) and Si - O - Si ( stretching , bending , rocking at 1100 , 847 , 461 cm ' ' ) 0.7 0.6 0.5 O 0.7 0.6 0.5 Esi - o - si 0.4 0.4 Esi - H 0.3 0.3 0.2 . 0.2 0.1 0.1 100 90 80 70 60 50 Si - H ...
... Si - H ( stretching , rocking at 2254 , 565 cm ) and Si - O - Si ( stretching , bending , rocking at 1100 , 847 , 461 cm ' ' ) 0.7 0.6 0.5 O 0.7 0.6 0.5 Esi - o - si 0.4 0.4 Esi - H 0.3 0.3 0.2 . 0.2 0.1 0.1 100 90 80 70 60 50 Si - H ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films