Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 111
... SiCOH films are under tensile stress , in the range 12 to 52 MPa . The higher final tensile stressses were obtained in the films deposited at lower average power , with the highest tensile stress obtained in the film depos- ited under ...
... SiCOH films are under tensile stress , in the range 12 to 52 MPa . The higher final tensile stressses were obtained in the films deposited at lower average power , with the highest tensile stress obtained in the film depos- ited under ...
Page 114
... SiCOH films vs deposition conditions J ( A / cm2 ) 103 10 10-5 10-6 107 10-8 10.9 10 101 -11 1 2 3 4 5 E ( MV / cm ) Figure 5. Leakage characterisitics of a typical SiCOH film Integration Characteristics Several tests have been done for ...
... SiCOH films vs deposition conditions J ( A / cm2 ) 103 10 10-5 10-6 107 10-8 10.9 10 101 -11 1 2 3 4 5 E ( MV / cm ) Figure 5. Leakage characterisitics of a typical SiCOH film Integration Characteristics Several tests have been done for ...
Page 115
... SiCOH in comparison to silicon oxide and silicon nitride . The high etch rate observed for SiCOH indicates that a layer such as SiN could be an effective RIE stop layer for SiCOH ILD's . Table 4. Comparative CMP and RIE rates Process ...
... SiCOH in comparison to silicon oxide and silicon nitride . The high etch rate observed for SiCOH indicates that a layer such as SiN could be an effective RIE stop layer for SiCOH ILD's . Table 4. Comparative CMP and RIE rates Process ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films