Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 167
... SiO2 IMD , the FSG IMD and the HSQ IMD . The FSG and HSQ IMD were able to improve tpd by 7 % and 15 % from tpd of the SiO2 IMD , respectively . Wiring Capacitance [ fF / mm ] Propagation Delay [ nsec . ] 120 100 25 % HDP SiO2 80 60 HSQ ...
... SiO2 IMD , the FSG IMD and the HSQ IMD . The FSG and HSQ IMD were able to improve tpd by 7 % and 15 % from tpd of the SiO2 IMD , respectively . Wiring Capacitance [ fF / mm ] Propagation Delay [ nsec . ] 120 100 25 % HDP SiO2 80 60 HSQ ...
Page 168
... SiO2 / a - C : F interface . Figure 16 shows adhesion strength as a function of post annealing and cap annealing temperature . The cap SiO2 thickness were 2μm and 0.2μm . As can be seen , without post annealing the adhesion was very ...
... SiO2 / a - C : F interface . Figure 16 shows adhesion strength as a function of post annealing and cap annealing temperature . The cap SiO2 thickness were 2μm and 0.2μm . As can be seen , without post annealing the adhesion was very ...
Page 233
... SiO2 is fluorine - doped silicon dioxide ( SiO2 : F ) . The greatest advantage of SiO2 : F is the simplicity of film deposition by introducing a fluorine source gas into an SiO2 PECVD system [ 1 ] . In general , dielectric constant of ...
... SiO2 is fluorine - doped silicon dioxide ( SiO2 : F ) . The greatest advantage of SiO2 : F is the simplicity of film deposition by introducing a fluorine source gas into an SiO2 PECVD system [ 1 ] . In general , dielectric constant of ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films