Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page xii
... Volume 536- Microcrystalline and Nanocrystalline Semiconductors - 1998 , L.T. Canham , M.J. Sailor , K. Tanaka , C - C . Tsai , 1999 , ISBN : 1-55899-442-4 Volume 537- GaN and Related Alloys , S.J. Pearton , C. Kuo , A.F. Wright , T ...
... Volume 536- Microcrystalline and Nanocrystalline Semiconductors - 1998 , L.T. Canham , M.J. Sailor , K. Tanaka , C - C . Tsai , 1999 , ISBN : 1-55899-442-4 Volume 537- GaN and Related Alloys , S.J. Pearton , C. Kuo , A.F. Wright , T ...
Page xiii
... Volume 561- Organic Nonlinear Optical Materials and Devices , B. Kippelen , H. Lackritz , R. Claus , 1999 , ISBN : 1-55899-468-8 Volume 562- Polycrystalline Metal and Magnetic Thin Films , K.P. Rodbell , D. Laughlin , O. Thomas , B ...
... Volume 561- Organic Nonlinear Optical Materials and Devices , B. Kippelen , H. Lackritz , R. Claus , 1999 , ISBN : 1-55899-468-8 Volume 562- Polycrystalline Metal and Magnetic Thin Films , K.P. Rodbell , D. Laughlin , O. Thomas , B ...
Page 83
... volume in pores can be calculated as Vads = α V m dads · d , - ( B1d , – B ̧do ) ( 4 ) where Vads is the volume of the liquid adsorbate in the pores , B , and B , are volume polarizability of the film before and after adsorption , d ...
... volume in pores can be calculated as Vads = α V m dads · d , - ( B1d , – B ̧do ) ( 4 ) where Vads is the volume of the liquid adsorbate in the pores , B , and B , are volume polarizability of the film before and after adsorption , d ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films