Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 60
Absorbance 0.35 0.30 0.25 0.20 0.15 0.10- Absorbance A B C 3000 A 0.05 0.00 -0.05 B см -0.10 0.02 2800 Wavenumber , cm - 1 3500 3000 2500 2000 1500 1000 -1 Wavenumber , cm ̈1 3. FT - IR spectra of NB ( 20 % ) / MSQ ( 80 % ) ( a ) after ...
Absorbance 0.35 0.30 0.25 0.20 0.15 0.10- Absorbance A B C 3000 A 0.05 0.00 -0.05 B см -0.10 0.02 2800 Wavenumber , cm - 1 3500 3000 2500 2000 1500 1000 -1 Wavenumber , cm ̈1 3. FT - IR spectra of NB ( 20 % ) / MSQ ( 80 % ) ( a ) after ...
Page 234
... absorbance intensity ( % ) 2 Absorbance ( a.u. ) Si - F 934 cm1 SiO2 : F SiO2 1500 1000 2 Wavenumber ( cm ) 3 500 4 5 Fig . 1. An SiO2 : F PECVD system . TFAA ( or CF4 ) flow rate ( sccm ) Fig . 2. Si - F / Si - O - Si absorbance ...
... absorbance intensity ( % ) 2 Absorbance ( a.u. ) Si - F 934 cm1 SiO2 : F SiO2 1500 1000 2 Wavenumber ( cm ) 3 500 4 5 Fig . 1. An SiO2 : F PECVD system . TFAA ( or CF4 ) flow rate ( sccm ) Fig . 2. Si - F / Si - O - Si absorbance ...
Page 235
... absorbance ratio of Si - F / Si - O - Si stretching vibration peak intensity increased with increasing flow rate of fluorine sources . The ratio increased to 11.4 % by addition of TFAA at 5 sccm , whereas the ratio of 9.3 % was obtained ...
... absorbance ratio of Si - F / Si - O - Si stretching vibration peak intensity increased with increasing flow rate of fluorine sources . The ratio increased to 11.4 % by addition of TFAA at 5 sccm , whereas the ratio of 9.3 % was obtained ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films