Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 152
... addition to thermal and mechanical stability play a critical role in the low - k material selection criteria and integration scheme . [ 14,15 ] Dielectric constant reduction below k = 2.5 within inorganic films is primarily achieved ...
... addition to thermal and mechanical stability play a critical role in the low - k material selection criteria and integration scheme . [ 14,15 ] Dielectric constant reduction below k = 2.5 within inorganic films is primarily achieved ...
Page 235
... addition of TFAA . An Si - F stretching vibration band [ 1-3 ] was observed at around 934 cm1 for all spectra of films deposited from addition of TFAA or CF4 , which confirmed that fluorine atoms incorporated in the deposited films and ...
... addition of TFAA . An Si - F stretching vibration band [ 1-3 ] was observed at around 934 cm1 for all spectra of films deposited from addition of TFAA or CF4 , which confirmed that fluorine atoms incorporated in the deposited films and ...
Page 261
... addition . On the other hand , at 20W , the number of disappearing Si- OH bond and that of the appearing Si - F are almost same . We know , under the conditions of 30 W , much more F atoms are produced by high rf power and substitute ...
... addition . On the other hand , at 20W , the number of disappearing Si- OH bond and that of the appearing Si - F are almost same . We know , under the conditions of 30 W , much more F atoms are produced by high rf power and substitute ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films