Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 123
... adhesion of two promising low - k polymers ( polyimide and benzocyclobutene ) to a silicon dioxide surface . Critical adhesion values were measured using interface fracture mechanics samples in a double cantilever beam geometry . The ...
... adhesion of two promising low - k polymers ( polyimide and benzocyclobutene ) to a silicon dioxide surface . Critical adhesion values were measured using interface fracture mechanics samples in a double cantilever beam geometry . The ...
Page 130
... adhesion , and good gap fill . Excellent adhesion of MOCVD copper film to TiN diffusion barrier film is achieved through a combination of process and equipment design [ 10 ] . The patterning of a - F : C stacking layers is by ...
... adhesion , and good gap fill . Excellent adhesion of MOCVD copper film to TiN diffusion barrier film is achieved through a combination of process and equipment design [ 10 ] . The patterning of a - F : C stacking layers is by ...
Page 207
... adhesion promoter on top of Cu ( a ) before and ( b ) after 30 min annealing at 500 ° C clearly see a diffusion profile of Cu into the adjacent 300 ° A of the adhesion promoter layer after the 500 ° C treatment . This resultwas ...
... adhesion promoter on top of Cu ( a ) before and ( b ) after 30 min annealing at 500 ° C clearly see a diffusion profile of Cu into the adjacent 300 ° A of the adhesion promoter layer after the 500 ° C treatment . This resultwas ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films