Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 123
... adhesion of two promising low - k polymers ( polyimide and benzocyclobutene ) to a silicon dioxide surface . Critical adhesion values were measured using interface fracture mechanics samples in a double cantilever beam geometry . The ...
... adhesion of two promising low - k polymers ( polyimide and benzocyclobutene ) to a silicon dioxide surface . Critical adhesion values were measured using interface fracture mechanics samples in a double cantilever beam geometry . The ...
Page 130
... adhesion , and good gap fill . Excellent adhesion of MOCVD copper film to TiN diffusion barrier film is achieved through a combination of process and equipment design [ 10 ] . The patterning of a - F : C stacking layers is by ...
... adhesion , and good gap fill . Excellent adhesion of MOCVD copper film to TiN diffusion barrier film is achieved through a combination of process and equipment design [ 10 ] . The patterning of a - F : C stacking layers is by ...
Page 204
... adhesion promoter with a thickness of 300-700Å . In order to study the properties of the adhesion promoter layer itself , in a few cases its thickness was increased to 3000Å . Some samples contained a metal layer ( Cu , Ta and TaN ) ...
... adhesion promoter with a thickness of 300-700Å . In order to study the properties of the adhesion promoter layer itself , in a few cases its thickness was increased to 3000Å . Some samples contained a metal layer ( Cu , Ta and TaN ) ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films