Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 56
... capacitors on ( 100 ) silicon wafers . The bottom plate of the capacitors was a full- surface film of sputtered Ti / Au / Ti ( 300A / 4000A / 300A ) . The dielectric materials were spin - coated onto the substrate at 3000 RPM ...
... capacitors on ( 100 ) silicon wafers . The bottom plate of the capacitors was a full- surface film of sputtered Ti / Au / Ti ( 300A / 4000A / 300A ) . The dielectric materials were spin - coated onto the substrate at 3000 RPM ...
Page 178
... Capacitors The aforementioned charge instabilities motivate using the oxide - sandwiched low - k polymer capacitor ... capacitors were subjected to BTS at 200 ° C for one hour . The C - V behavior is unaffected by the thermal cycles if ...
... Capacitors The aforementioned charge instabilities motivate using the oxide - sandwiched low - k polymer capacitor ... capacitors were subjected to BTS at 200 ° C for one hour . The C - V behavior is unaffected by the thermal cycles if ...
Page 182
... capacitors under more severe BTS conditions than in the C - V experiments , namely under +60 V bias ( 1.5 MV / cm ) at 250 ° C , to yield more practical failure times . Indeed , all Cu capacitors even- tually fail catastrophically after ...
... capacitors under more severe BTS conditions than in the C - V experiments , namely under +60 V bias ( 1.5 MV / cm ) at 250 ° C , to yield more practical failure times . Indeed , all Cu capacitors even- tually fail catastrophically after ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films