Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 152
... compared to standard Cu / oxide based structures are shown . Total capacitance reductions are dependent on additional dielectrics needed for successful integration . Hardmask Low k Optional Oxide Sidewall Liner Etch Stop Low. 152.
... compared to standard Cu / oxide based structures are shown . Total capacitance reductions are dependent on additional dielectrics needed for successful integration . Hardmask Low k Optional Oxide Sidewall Liner Etch Stop Low. 152.
Page 168
... compared to that of SiO2 IMD . We demonstrated the improvement in device speed of 0.18 - μm CMOS of a - C : F IMD compared to HDP - CVD SiO2 IMD . The transistor characteristics were identical between the a- C : F and SiO2 IMD . Figure ...
... compared to that of SiO2 IMD . We demonstrated the improvement in device speed of 0.18 - μm CMOS of a - C : F IMD compared to HDP - CVD SiO2 IMD . The transistor characteristics were identical between the a- C : F and SiO2 IMD . Figure ...
Page 235
... compared with CF4 . Dep . rate ( nm / min ) Refractive index Dielectric constant 3.8 3.6 3.4- -Tsub = 300 ° C 3.2 - Pch = 0.2 Torr TFAA CF PRF = 0.4 W / cm2 3 1.46 1.44- CF4 1.42- 1.4Qncs = 2.5 sccm TFAA 1.38 - Q0210 sccm 1.36 10 8 Si ...
... compared with CF4 . Dep . rate ( nm / min ) Refractive index Dielectric constant 3.8 3.6 3.4- -Tsub = 300 ° C 3.2 - Pch = 0.2 Torr TFAA CF PRF = 0.4 W / cm2 3 1.46 1.44- CF4 1.42- 1.4Qncs = 2.5 sccm TFAA 1.38 - Q0210 sccm 1.36 10 8 Si ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films