Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 69
... dielectric constant materials that can satisfy a number of diverse performance requirements necessary for successful integration into IC devices . This has led to extensive efforts to develop low k materials and the associated process ...
... dielectric constant materials that can satisfy a number of diverse performance requirements necessary for successful integration into IC devices . This has led to extensive efforts to develop low k materials and the associated process ...
Page 237
Dielectric constant As summarized in Table IV , dielectric constant decreased with increasing O2 plasma treatment time till 1 hour , however , it increased again after that . This can be explained by the decrease in F- content that ...
Dielectric constant As summarized in Table IV , dielectric constant decreased with increasing O2 plasma treatment time till 1 hour , however , it increased again after that . This can be explained by the decrease in F- content that ...
Page 258
dielectric constant due to electronic polarization , which is equal to the square of the refractive index , decreased with increasing CF concentration , but it only contributes to decrease the dielectric constant 0.1 ~ 0.2 . We ...
dielectric constant due to electronic polarization , which is equal to the square of the refractive index , decreased with increasing CF concentration , but it only contributes to decrease the dielectric constant 0.1 ~ 0.2 . We ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
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1999 Materials Research a-C:F film a-CN absorption adhesion promoter adsorption annealing as-deposited atoms barrier capacitance capacitors carbon chemical cm¹ Constant Materials curing temperature damascene debond decrease deposition rate device dielectric constant diffusion electrical Electron ellipsometry etching film expansion film thickness films deposited FLAC fluorine FOx films FTIR gate heating increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured metal modulus moisture MSSQ nitride nitrogen oxide peak PECVD plasma treatment polarization polyimide polymer polymerization pore porogen porosity porous film PPSZ Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Figure shows Si-H bonds Si-O Si-O-Si SiCOH silica silicon silicon dioxide silsesquioxane SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp Technology TEOS thermal conductivity thin films Torr voltage wafer xerogel xerogel films