Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 69
... dielectric constant materials that can satisfy a number of diverse performance requirements necessary for successful integration into IC devices . This has led to extensive efforts to develop low k materials and the associated process ...
... dielectric constant materials that can satisfy a number of diverse performance requirements necessary for successful integration into IC devices . This has led to extensive efforts to develop low k materials and the associated process ...
Page 255
... dielectric constant F - doped silicon oxide films ( SiO : F ) can be prepared by adding fluorine source , like as CF , to the conventional PECVD processes . We could obtain SiO : F films with dielectric constant as low as 2.6 from the ...
... dielectric constant F - doped silicon oxide films ( SiO : F ) can be prepared by adding fluorine source , like as CF , to the conventional PECVD processes . We could obtain SiO : F films with dielectric constant as low as 2.6 from the ...
Page 281
... Dielectric Constant The dielectric constants of the film cured at 360 and 450 ° C were 3.0 and 2.3 , respectively when measured in air . The low dielectric constant of the film cured at 450 ° C may be explained by the reduction in the ...
... Dielectric Constant The dielectric constants of the film cured at 360 and 450 ° C were 3.0 and 2.3 , respectively when measured in air . The low dielectric constant of the film cured at 450 ° C may be explained by the reduction in the ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films