Low-dielectric Constant MaterialsMaterials Research Society, 1999 - Electric insulators and insulation |
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Page 119
... fluorine content ranging from 2 to 55 at . % . 0 0 20 40 Fluorine content ( % ) 60 Figure 2 : The measured dielectric constant of the a - C : F film as a function of fluorine content ( at . % ) in the film . The thermal stability of the ...
... fluorine content ranging from 2 to 55 at . % . 0 0 20 40 Fluorine content ( % ) 60 Figure 2 : The measured dielectric constant of the a - C : F film as a function of fluorine content ( at . % ) in the film . The thermal stability of the ...
Page 198
... fluorine [ 4 ] . In order to quantify fluorine diffusion , aluminum was used to cap the ILBL in the initial survey of materials as fluorine readily diffuses through aluminum . The aluminum cap was deposited using e - beam evaporation ...
... fluorine [ 4 ] . In order to quantify fluorine diffusion , aluminum was used to cap the ILBL in the initial survey of materials as fluorine readily diffuses through aluminum . The aluminum cap was deposited using e - beam evaporation ...
Page 201
... Fluorine NRA profile of Cu / Co / SiO : F surface . The Al / Si control annealed next to this sample showed a fluorine peak which accounted for half of the surface concentration . The remainder is attributed to fluorine which diffused ...
... Fluorine NRA profile of Cu / Co / SiO : F surface . The Al / Si control annealed next to this sample showed a fluorine peak which accounted for half of the surface concentration . The remainder is attributed to fluorine which diffused ...
Contents
Porous Organosilicates for OnChip Dielectric Applications | 3 |
A New LowDielectric Constant Polymer Material K | 17 |
Wave Polymerization During Vapor Deposition of Porous | 23 |
Copyright | |
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1999 Materials Research a-C:F film absorption adsorbate adsorption annealing as-deposited atoms barrier calculated capacitance capacitors carbon chemical cm¹ Constant Materials damascene structure debond growth decrease density devices dielectric constant diffusion dual damascene interconnect Electron ellipsometry etch fabricated Figure film thickness films deposited fluorine FOx films FTIR increase integration interface layer leakage current low dielectric constant low-k low-k materials Materials Research Society measured modulus moisture moisture stress nitride oxide peak PECVD plasma treatment polyimide polymer polymerization pore porosity porous film Proc ratio reduced refractive index resistance sample sccm Semiconductor shown in Fig shows Si-H bonds Si-O Si-O-Si SiC:H SiCOH films silica silicon silicon dioxide SiO:F SiO2 SiOF films spectra spin coating sputtering stress substrate surface Symp tantalum nitride Technology TEOS thermal conductivity thermal stability thin films Torr ULSI voltage wafer xerogel xerogel films